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Apart from crystal quality, problems with the interface of SiC with silicon dioxide have hampered the development of SiC-based power MOSFETs and insulated-gate bipolar transistors.Identification of stacking faults in silicon carbide by polarization-solved second harmonic generation microscopy.As a result of optimized gate oxide thickness our gate o
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Avago’s ACPL-P346 can be a high-speed two.five A gate drive optocoupler that incorporates an AlGaAs LED, which is optically coupled to an integrated circuit with a power output stage. This optocoupler is ideally suited for driving power and SiC MOSFETs used in inverter or AC-DC/DC-DC converter applications. The high operating voltage range in the